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參數(shù)資料
| 型號： | 933272740133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 39 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 41K |
| 代理商： | 933272740133 |
1996 Apr 26
2
Philips Semiconductors
Product specication
Voltage regulator diodes
BZX55 series
FEATURES
Total power dissipation:
max. 500 mW
Tolerance series: ±5%
Working voltage range:
nom. 2.4 to 75 V (E24 range)
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
Low voltage stabilizers or voltage
references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24
±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
The diodes are type branded.
handbook, halfpage
MAM239
ka
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤ 50 °C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IF
continuous forward current
250
mA
IZSM
non-repetitive peak reverse current
tp = 100 s; square wave;
Tj =25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb =50 °C; note 1
400
mW
Tamb =50 °C; note 2
500
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s; square wave;
Tj =25 °C prior to surge
40
W
tp = 8.3 ms; square wave;
Tj ≤ 150 °C prior to surge
30
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Fig.4
1.0
V
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