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參數(shù)資料
| 型號(hào)： | 933247060133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 齊納二極管 |
| 英文描述： | 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁(yè)數(shù)： | 6/7頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 933247060133 |
1996 Apr 26
6
Philips Semiconductors
Product specication
Voltage regulator diodes
BZX55 series
Fig.3
Maximum permissible non-repetitive
peak reverse power dissipation
versus duration.
handbook, halfpage
MBG801
103
1
duration (ms)
PZSM
(W)
10
102
101
10
1
(1)
(2)
(1) Tj =25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
Fig.5
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
060
0
2
3
1
MBG783
20
40
IZ (mA)
SZ
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZX55-C2V4 to C4V3.
Tj =25to150 °C.
Fig.6
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
020
16
10
0
5
MBG782
48
12
IZ (mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZX55-C4V7 to C12.
Tj =25to150 °C.
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