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參數(shù)資料
| 型號： | 933246920143 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 40 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-34 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 24K |
| 代理商： | 933246920143 |
1996 Apr 26
2
Philips Semiconductors
Product specication
Bidirectional voltage regulator diode
BZV37
FEATURES
Low total power dissipation:
max. 400 mW
Working voltage: nom. 6.5 V
Non-repetitive peak reverse power
dissipation: max. 40 W
Bidirectional.
APPLICATIONS
Voltage stabilizer and transient
protection element.
DESCRIPTION
Low-power voltage regulator diode in an hermetically sealed leaded glass
SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
The diode is type branded.
handbook, halfpage
MAM247
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
IZ
continuous working current
50
mA
IZSM
non-repetitive peak reverse current
t = 30 s; t1 =8 s; t2 =20 s;
Tj =25 °C prior to surge; see Fig.3
7A
t = 30 s; t1 =10 s; t2 = 1000 s;
Tj =25 °C prior to surge; see Fig.3
2A
Ptot
total power dissipation
Tamb ≤ 25 °C
400
mW
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 s square wave; Tj =25 °C
prior to surge; see Fig.2
40
W
Tstg
storage temperature
65
+200
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
NOM.
MAX.
UNIT
VZ
working voltage
IZtest = 5 mA
6.2
6.5
6.8
V
V(CL)R
clamping voltage
IZSM = 7 A; t1 =8 s; t2 =20 s
25
V
IZSM = 2 A; t1 =10 s;
t2 = 1000 s
15
V
rdiff
differential resistance
IZtest =5mA
20
SZ
temperature coefcient
IZtest =5mA
0.1
%/K
Cd
diode capacitance
VR =0V
150
pF
IR
reverse current
VR =4V
10
A
VR =4V; Tj = 150 °C
30
A
VR =2V
3
A
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