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參數(shù)資料
| 型號(hào)： | 933209630215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 42K |
| 代理商： | 933209630215 |
1999 May 31
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BCX17; BCX18
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. VBE decreases by approximately 2 mV/°C with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
100 nA
IE = 0; VCB = 20 V; Tj = 150 °C
5
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 100 mA; VCE = 1 V
100
600
IC = 300 mA; VCE = 1V
70
IC = 500 mA; VCE = 1V
40
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA
620 mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V; note 1
1.2
V
Cc
collector capacitance
IE =Ie = 0; VCB = 10 V; f = 1 MHz
9
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 80
MHz
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