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參數(shù)資料
| 型號： | 933188180215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 933188180215 |
1997 Oct 29
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistor
BFR93
FEATURES
Very low intermodulation distortion
High power gain
Excellent wideband properties and
low noise up to high frequencies
due to its very high transition
frequency.
APPLICATIONS
RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT23.
page
MSB003
Top view
12
3
Marking code: R1p.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 95 °C
300
mW
Cre
feedback capacitance
IC = 2 mA; VCE = 5 V; f = 1 MHz
0.8
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tj =25 °C
5
GHz
GUM
maximum unilateral power gain
IC = 30 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C
16.5
dB
F
noise gure
IC = 2 mA; VCE = 5 V; f = 500 MHz;
Tamb =25 °C
1.9
dB
dim
intermodulation distortion
IC = 30 mA; VCE =5V; RL =75 ;
VO = 300 mV; fp +fq fr = 493.25 MHz;
Tamb =25 °C
60
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
VEBO
emitter-base voltage
open collector
2V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 95 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
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| 933189 | 制造商:ERNI Electronics 功能描述:ERMD 176 FS EE 02.1 A--H 制造商:ERNI Electronics 功能描述:933189 / ERMD 176 FS EE 02.1 A--H / ERMET F |
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