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參數(shù)資料
| 型號： | 933167730126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | 933167730126 |
1997 Jul 07
3
Philips Semiconductors
Product specication
PNP medium frequency transistor
BF324
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
30
V
VEBO
emitter-base voltage
open collector
4V
IC
collector current (DC)
25
mA
ICM
peak collector current
25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
420
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4V
100
nA
hFE
DC current gain
VCE = 10 V
IC = 1mA
45
IC = 4mA
25
VBE
base-emitter voltage
IC = 4 mA; VCE = 10 V
760
mV
Crb
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz
0.3
pF
fT
transition frequency
VCE = 10 V; f = 100 MHz
IC = 1mA
350
MHz
IC = 4 mA
400
450
MHz
IC = 8mA
440
MHz
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