參數(shù)資料
型號(hào)： 933149380235
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, SMD, 3 PIN
文件頁(yè)數(shù)： 3/8頁(yè)
文件大?。?/td> 42K
代理商： 933149380235
1999 Apr 19
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BCW69; BCW70
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 20 V
100
nA
IE = 0; VCB = 20 V; Tj = 100 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100
nA
hFE
DC current gain
IC = 10 A; VCE = 5V
BCW69
90
BCW70
150
DC current gain
IC = 2 mA; VCE = 5V
BCW69
120
260
BCW70
215
500
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
80
300
mV
IC = 50 mA; IB = 2.5 mA; note 1
150
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
720
mV
IC = 50 mA; IB = 2.5 mA; note 1
810
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600
750
mV
Cc
collector capacitance
IE =Ie = 0; VCB = 10 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5V;
f = 100 MHz
100
MHz
F
noise gure
IC = 200 A; VCE = 5V;
RS =2k; f = 1 kHz; B = 200 Hz
10
dB
相關(guān)PDF資料
PDF描述
933149380215 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
933149370215 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
933163480235 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
933163480215 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
933163490235 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET
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