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參數(shù)資料
| 型號： | 933106600112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 129K |
| 代理商： | 933106600112 |
1996 Jul 30
6
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF245A; BF245B; BF245C
handbook, halfpage
VDS (V)
ID
(mA)
30
0
020
10
MBH554
20
10
VGS = 0 V
1 V
2 V
3 V
4 V
Fig.8
Output characteristics for BF245C;
typical values.
VDS = 15 V; Tj =25 °C.
Fig.9
Drain current as a function of junction
temperature; typical values for BF245A.
VDS =15V.
handbook, halfpage
0
50
150
Tj (°C)
4
ID
(mA)
3
1
2
MGE775
100
0.5 V
VGS = 0 V
1.5 V
1 V
Fig.10 Drain current as a function of junction
temperature; typical values for BF245B.
handbook, halfpage
0
50
150
15
5
10
MGE776
100
Tj (°C)
ID
(mA)
VGS = 0 V
2 V
1 V
VDS =15V.
Fig.11 Drain current as a function of junction
temperature; typical values for BF245C.
VDS =15V.
handbook, halfpage
0
50
150
20
0
MGE779
100
4
8
12
16
Tj (°C)
ID
(mA)
VGS = 0 V
4 V
2 V
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