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參數(shù)資料
| 型號： | 8TQ100STRRPBF |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 8TQ100STRRPBF |
Document Number: 94266
For technical questions, contact: diodestech@vishay.com
www.vishay.com
Revision: 09-Sep-09
3
8TQ080SPbF, 8TQ100SPbF
Schottky Rectifier, 8 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
0.1
1
100
10
1000
I F
-
Instantaneous
Forward
Current
(A)
VFM - Forward Voltage Drop (V)
0.6
0.4
0.8
1.2
1.8
1.6
0.2
1.0
1.4
2.0 2.2
0
T
J = 175 °C
T
J = 125 °C
T
J = 25 °C
0.001
0.0001
1
10
100
0.1
0.01
I R
-Reverse
Current
(mA)
VR - Reverse Voltage (V)
20
40
80
100
60
0
T
J = 175 °C
T
J = 150 °C
T
J = 125 °C
T
J = 100 °C
T
J = 75 °C
T
J = 50 °C
T
J = 25 °C
100
1000
C
T
-Junction
Capacitance
(pF)
VR - Reverse Voltage (V)
40
20
60
80
100 110
30
10
50
70
90
0
T
J = 25 °C
0.1
1
10
0.0001
0.001
0.01
0.1
1
t1 - Rectangular Pulse Duration (s)
Z
thJC
-
Thermal
Impedance
(°C/W)
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
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