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參數(shù)資料
| 型號： | 8Q1024K8SRAM |
| 廠商： | Aeroflex Inc. |
| 英文描述： | high-performance 1M byte (8Mbit) CMOS static RAM |
| 中文描述： | 高性能1M字節(jié)（8Mbit）的CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 4/15頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 8Q1024K8SRAM |
4
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Maximum junction temperature may be increased to +175
°
C during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
PARAMETER
LIMITS
V
DD
DC supply voltage
-0.5 to 4.6V
V
I/O
Voltage on any pin
-0.5 to 4.6V
T
STG
Storage temperature
-65 to +150
°
C
P
D
Maximum power dissipation
1.0W (per byte)
T
J
Maximum junction temperature
2
+150
°
C
Θ
JC
Thermal resistance, junction-to-case
3
10
°
C/W
I
I
DC input current
±
10 mA
SYMBOL
PARAMETER
LIMITS
V
DD
Positive supply voltage
3.0 to 3.6V
T
C
Case temperature range
-40 to +125
°
C
V
IN
DC input voltage
0V to V
DD
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