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參數(shù)資料
| 型號(hào)： | 8ETX06STRRPBF |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | LEAD FREE, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 1168K |
| 代理商： | 8ETX06STRRPBF |
2
8ETX06, 8ETX06S, 8ETX06-1, 8ETX06FP
Bulletin PD-20766 rev. C 09/06
www.irf.com
VBR, Vr
Breakdown Voltage,
600
-
V
IR = 100μA
Blocking Voltage
VF
Forward Voltage
-
2.3
3.0
V
IF = 8A, TJ = 25°C
-
1.4
1.7
V
IF = 8A, TJ = 150°C
IR
Reverse Leakage Current
-
0.3
50
μAVR = VR Rated
-
35
500
μATJ = 150°C, VR = VR Rated
CT
Junction Capacitance
-
17
-
pF
VR = 600V
LS
Series Inductance
-
8.0
-
nH
Measured lead to lead 5mm from package body
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max
Test Conditions
Units
trr
Reverse Recovery Time
-
15
19
ns
IF = 1A, diF/dt = 100A/μs, VR = 30V
-16
24
IF = 8A, diF/dt = 100A/μs, VR = 30V
-17
-
TJ = 25°C
-40
-
TJ = 125°C
IRRM
Peak Recovery Current
-
2.3
-
A
TJ = 25°C
-
4.5
-
TJ = 125°C
Qrr
Reverse Recovery Charge
-
20
-
nC
TJ = 25°C
-
100
-
TJ = 125°C
trr
Reverse Recovery Time
-
31
-
ns
IRRM
Peak Recovery Current
-
12
-
A
T
J = 125°C
Qrr
Reverse Recovery Charge
-
195
-
nC
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
I
F = 8A
diF /dt = 200A/μs
VR = 390V
Parameters
Min Typ Max
Test Conditions
Units
I
F = 8A
diF /dt = 600A/μs
VR = 390V
Parameters
Min
Typ
Max
Units
TJ
Max. Junction Temperature Range
-
175
°C
TStg
Max. Storage Temperature Range
- 65
-
175
RthJC
Thermal Resistance, Junction to Case
Per Leg
-
1.4
2
°C/W
(Fullpack) Per Leg
-
3.4
4.3
RthJA
Thermal Resistance, Junction to Ambient
Per Leg
-
70
RthCS
Thermal Resistance, Case to Heatsink
-
0.5
-
Weight
-
2.0
-
g
-
0.07
-
(oz)
MountingTorque
6.0
-
12
Kg-cm
5.0
-
10
lbf.in
Thermal - Mechanical Characteristics
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 8ETX06STRR | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 8EWF06S | 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-252AA |
| 8P128SEA0202I15 | 8K X 8 MULTI DEVICE SRAM CARD, 150 ns, UUC68 |
| 8R128SEA0101C25 | 8K X 8 MULTI DEVICE SRAM CARD, 250 ns, UUC68 |
| 8R128SEA0200I25 | 8K X 8 MULTI DEVICE SRAM CARD, 250 ns, UUC68 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 8EWF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SURFACE MOUNTABLE FAST SOFT RECOVERY DIODE |
| 8EWF..S | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:optimized or combined short reverse rocovery time, low forward voltage drop and low leakage current |
| 8EWF02S | 功能描述:整流器 200 Volt 8.0 Amp RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| 8EWF02S | 制造商:Vishay Semiconductors 功能描述:DIODE ULTRA FAST 8A |
| 8EWF02S.PBF | 制造商:International Rectifier 功能描述:DIODE ULTRA FAST 8A |
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