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參數(shù)資料
| 型號(hào)： | 8550S |
| 英文描述： | General purpose transistors |
| 中文描述： | 通用晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 354K |
| 代理商： | 8550S |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8550S
TRANSISTOR
PNP
FEATURE
Power dissipation
P
CM
: 0.625 W
Collector current
I
CM
: -0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
T
stg
: -55
ELECTRICAL CHARACTERISTICS
Tamb=25
to +150
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
, I
E
=0
-40
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= -0.1 mA
I
B
=0
-25
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -100
A
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -40 V , I
E
=0
-0.1
A
Collector cut-off current
I
CEO
V
CE
= -20 V , I
B
=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= - 3 V I
C
=0
-0.1
A
h
FE 1
V
CE
= -1 V, I
C
= -50mA
85
300
DC current gain
h
FE 2
V
CE
= -1 V, I
C
= -500mA
50
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-500mA, I
B
=-50 mA
-0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-500mA, I
B
=-50 mA
-1.2
V
Transition frequency
f
T
V
CE
=- 6 V, I
C
=-20mA
f =
30MHz
150
MHz
CLASSIFICATION OF h
FE
(1)
Rank
B
C
D
Range
85-160
120-200
160-300
1
2
3
TO
92
1.EMITTER
2. COLLECTOR
3.BASE
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 8550S_10 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 8550S-C-AE3-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 8550S-C-AE3-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 8550S-C-AE3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
| 8550S-C-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR |
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