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參數(shù)資料
| 型號： | 80RIA80M |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 125 A, 800 V, SCR, TO-209AC |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | 80RIA80M |
80RIA Series
2222222222222
12
2
I
T(AV)
Max. average on-state current
80
A
180° conduction, half sine wave
@ Case temperature
85
°C
I
T(RMS)
Max. RMS on-state current
125
A
DC @ 75°C case temperature
I
TSM
Max. peak, one-cycle
1900
t = 10ms
No voltage
non-repetitive surge current
1990
t = 8.3ms
reapplied
1600
t = 10ms
100% V
RRM
1675
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
18
t = 10ms
No voltage
Initial T
J
= T
J
max.
16
t = 8.3ms
reapplied
12.7
t = 10ms
100% V
RRM
11.7
t = 8.3ms
reapplied
I
2
√t
Maximum I
2
√t for fusing
180.5
KA
2
√s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.60
V
I
pk
= 250A, T
J
= 25°C t
p
= 10ms sine pulse
I
H
Maximum holding current
150
I
L
Typical latching current
400
0.99
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
2.29
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.84
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
80RIA
Units
Conditions
1.13
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
m
V
A
mA
T
J
= 25°C, anode supply 12V resistive load
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
VDRM/VRRM, max. repetitive
VRSM , maximum non-
IDRM/IRRM max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ TJ = 125°C
VV
mA
40
400
500
80RIA
80
800
900
15
120
1200
1300
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