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參數(shù)資料
| 型號： | 7S |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW |
| 中文描述： | 進(jìn)步黨500個，50 V電阻毫安裝備晶體管R1 \u003d 2.2千瓦，R2的\u003d 2.2千瓦 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 73K |
| 代理商： | 7S |
9397 750 14904
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
3 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 k
, R2 = 2.2 k
3.
Ordering information
[1]
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9
).
4.
Marking
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 4:
Type number
Ordering information
Package
Name
SC-59A
SC-43A
Description
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
Version
SOT346
SOT54
PDTB123EK
PDTB123ES
[1]
PDTB123ET
-
SOT23
Table 5:
Type number
PDTB123EK
PDTB123ES
PDTB123ET
Marking codes
Marking code
[1]
E2
B123ES
*7S
Table 6:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
V
I
input voltage
positive
negative
I
O
output current (DC)
P
tot
total power dissipation
SOT346
SOT54
SOT23
T
stg
storage temperature
T
j
junction temperature
T
amb
ambient temperature
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
Max
50
50
10
Unit
V
V
V
-
-
-
+10
12
500
V
V
mA
T
amb
≤
25
°
C
[1]
-
250
500
250
+150
150
+150
mW
mW
mW
°
C
°
C
°
C
[1]
-
[1]
-
65
-
65
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