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參數(shù)資料
| 型號： | 7P56FLE230C25 |
| 廠商： | MICROSEMI CORP-PMG MICROELECTRONICS |
| 元件分類： | PROM |
| 英文描述： | 37748736 X 16 FLASH 5V PROM CARD, 150 ns, UUC68 |
| 封裝： | CARD-68 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 238K |
| 代理商： | 7P56FLE230C25 |
6
White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com
White Electronic Designs
PCMCIA Flash Memory Card
FLE Series
August 2000
Rev. 4
Symbol
Parameter
Notes
Min
Max
Units
Test Conditions
ILI
Input Leakage Current
1
±20
μAVCC = VCC MAX
VIN =VCC or VSS
ILO
Output Leakage Current
1
±20
μAVCC = VCC MAX
VOUT =VCC or VSS
VIL
Input Low Voltage
1
0
0.8
V
VIH
Input High Voltage
1
0.7 VCC
VCC+0.5
V
VOL
Output Low Voltage
1
0.4
V
IOL = 3.2mA
VOH
Output High Voltage
1
VCC-0.4
VCC
VIOH = -2.0mA
VLKO
VCC Erase/Program
Lock Voltage
1
3.25
V
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 μA when VIN = GND due to internal pull-up resistors.
Leakage currents on RST will be <150μA when VIN=VCC due to internal pull-down resistor.
Absolute Maximum Ratings2
Operating Temperature TA (ambient)
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C**
Storage Temperature
Commercial
0°C to +60 °C
Industrial
-40°C to +85 °C**
Voltage on any pin relative to VSS
-0.5V to VCC+0.5V (1)
VCC supply Voltage relative to VSS
-0.5V to +7.0V
Notes:
1. During transitions, inputs may undershoot to -2.0V or overshoot to VCC +2.0V for
periods less than 20ns.
2. Stress greater than those listed under “Absolute Maximum ratings” may cause
permanent damage to the device. This is a stress rating only and functional operation
at these or any other conditions greater than those indicated in the operational
sections of this specication is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC CHARACTERISTICS (1)
Sym
Parameter
Density
(Mbytes)
Notes
Typ(4)
Max
Units
Test Conditions
ICCR
VCC Read Current
All
40(5)
75
mA
VCC = VCC MAX
tcycle = 150ns,CMOS levels
ICCW
VCC Program Current
All
30(6)
40(6)
mA
ICCE
VCC Erase Current
All
30(6)
40(6)
mA
ICCS
(CMOS)
VCC Standby Current
8MB
2,3
50
200
μAVCC = VCC MAX
Control Signals = VCC
Reset = VSS, CMOS levels
64MB
100
400
CMOS Test Conditions: VCC = 5V ± 5%, VIL = VSS ± 0.2V, VIH = VCC ± 0.2V
Notes:
1. All currents are RMS values unless otherwise specied. ICCR, ICCW and ICCE are based on Word wide operations.
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.
3. ICCS is specied for lowest density card (8MB for two, 32Mb components) This represents a single pair of devices.
4. Typical: VCC = 5V, T = +25°C.
5. The Icc current is typically less then 1mA/MHz per device, with with OE not active.
6. Icc active while Embedded Program or Erase algorithm is in progress. Value based on one device active.
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