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參數(shù)資料
| 型號(hào)： | 7N60L-TA3-T |
| 廠商： | 友順科技股份有限公司 |
| 英文描述： | 7.4 Amps, 600 Volts N-CHANNEL MOSFET |
| 中文描述： | 7.4安培，600伏特N通道MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 154K |
| 代理商： | 7N60L-TA3-T |
7N60
Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
QW-R502-076,B
ABS OLUT E MAX IMUM RAT INGS
(
T
C
= 25
, unless otherwise specified)
PARAMETER
SYMBOL
V
DSS
V
GSS
I
AR
RATINGS
600
±30
7.4
7.4
4.7
29.6
580
14.2
4.5
142
1.14
+150
-55 ~ +150
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 1)
T
C
= 25°C
T
C
= 100°C
Continuous Drain Current
I
D
Pulsed Drain Current (Note 1)
Avalanche Energy, Single Pulsed (Note 2)
Avalanche Energy, Repetitive Limited by T
J(MAX)
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation (T
C
= 25
Derate above 25
Junction Temperature
Operating and Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
I
DM
E
AS
E
AR
dv/dt
)
P
D
T
J
T
STG
T HERMAL DAT A
PARAMETER
SYMBOL
θ
JA
θ
JC
θ
CS
MIN
TYP
0.5
MAX
62.5
0.88
UNIT
°C/W
°C/W
°C/W
Junction-to-Ambient
Junction-to-Case
Case-to-Sink
ELECT RICAL CHARACT ERIS T ICS
(T
C
=25
, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
DS
= 480V, T
C
= 125°C
V
GS
= 30V, V
DS
= 0V
V
GS
= -30V, V
DS
= 0V
I
D
= 250μA, Referenced to
25°C
600
V
μA
μA
nA
nA
10
100
100
-100
Drain-Source Leakage Current
I
DSS
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
GSSF
I
GSSR
BV
DSS
T
J
0.67
V/
V
GS(TH)
R
DS(ON)
g
FS
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.7A
V
DS
= 50V, I
D
= 3.7A (Note 4)
2.0
4.0
1.0
V
S
6.4
C
ISS
C
OSS
C
RSS
1400
180
21
pF
pF
pF
V
DS
=25V, V
GS
=0V, f=1.0 MHz
t
d(ON)
t
R
t
d(OFF)
t
F
Q
G
Q
GS
Q
GD
70
170
140
130
38
ns
ns
ns
ns
nC
nC
nC
V
DD
=300V, I
D
=7.4A, R
G
=25
(Note 4, 5)
29
7
14.5
V
DS
=480V, I
D
=7.4A, V
GS
=10 V
(Note 4, 5)
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