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參數(shù)資料
| 型號(hào)： | 7MBR50SB060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | IGBT 晶體管 |
| 英文描述： | IGBT(600V/50A/PIM) |
| 中文描述： | 50 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 338K |
| 代理商： | 7MBR50SB060 |
7MBR 50SA-060
IGBT PIM
600V
6x50A+Chopper
I
Electrical Characteristics
( T
j
=25°C )
Items
Symbols
I
CES
I
GES
V
GE(th)
Test Conditions
Min.
Typ.
Max.
Units
1.0
200
8.5
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=
±
20V
V
GE
=20V I
C
=50mA
V
GE
=15V
I
C
= 50A
f=1MHz, V
GE
=0V, V
CE
=10V
V
CC
= 300V
I
C
= 50A
V
GE
=
±
15V
R
G
= 51
Inductive Load
mA
nA
5.5
7.8
1.8
1.95
5000
0.45
0.25
0.08
0.40
0.05
Chip
Terminal
V
Collector-Emitter Saturation Voltage
V
CE(sat)
2.40
Input Capacitance
C
ies
t
on
t
r,x
t
r,i
t
off
t
f
pF
1.2
0.6
Turn-on Time
1.0
0.35
Turn-off Time
I
μ
s
Chip
Terminal
1.75
1.9
Diode Forward On-Voltage
V
F
I
F
=50A
2.6
300
V
I
F
Reverse Recovery Time
t
rr
I
F
=50A
ns
Chip
Terminal
1.1
1.2
Forward Voltage
V
FM
I
F
=50A
1.5
1.0
1.0
200
V
R
Reverse Current
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Collector-Emitter Saturation Voltage
I
RRM
I
CES
I
GES
V
CE(sat)
V
R
=800V
V
GE
=0V V
CE
=600V
V
CE
=0V V
GE
=
±
20V
V
GE
=15V
I
C
=30A
V
CC
= 300V
I
C
= 30A
V
GE
=
±
15V
R
G
= 82
V
R
=600V
T= 25°C
T=100°C
T=25 / 50°C
mA
mA
nA
Chip
Terminal
1.80
1.95
0.45
0.25
0.40
0.05
2.4
1.2
0.6
1.0
0.35
1.0
t
on
t
r,x
t
off
t
f
I
RRM
Turn-on Time
Turn-off Time
B
Reverse Current
mA
5000
495
3375
Resistance
R
465
3305
520
3450
N
B Value
B
K
I
Thermal Characteristics
Items
Symbols
Test Conditions
Inverter IGBT
Inverter FRD
Brake IGBT
Rectifier Diode
With Thermal Compound
Min.
Typ.
Max.
Units
0.63
1.33
1.04
2.42
°C/W
Thermal Resistance (1 device)
R
th(j-c)
Contact Thermal Resistance
R
th(c-f)
0.05
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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