參數(shù)資料
型號: 7MBR30U2A060
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE (U series) 600V / 30A / PIM
中文描述: 30 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁數(shù): 3/7頁
文件大?。?/td> 191K
代理商: 7MBR30U2A060
IGBT Module
7MBR30U2A060
Characteristics (Representative)
Vcc=300V, Ic=30A, Tj= 25°C
VGE=0V, f= 1MHz, Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Inverter ]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
0
20
40
60
80
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
VGE=20V15V 12V
10V
8V
0
20
40
60
80
0
1
2
3
4
5
Collector-Emitter voltage : VCE [ V ]
C
VGE=20V 15V
12V
10V
8V
0
20
40
60
80
0
1
2
3
4
Collector-Emitter voltage : VCE [ V ]
C
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
C
Ic=60A
Ic=30A
Ic=15A
0.01
0.10
1.00
10.00
0
10
20
30
Collector-Emitter voltage : VCE [ V ]
C
Cies
Coes
Cres
0
100
200
300
400
500
0
20
40
60
80
100
120
140
0
5
10
15
20
25
C
Gate charge : Qg [ nC ]
VGE
VCE
G
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