參數(shù)資料
型號(hào): 7MBR25UA120
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE (U series) 1200V / 25A / PIM
中文描述: 25 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁數(shù): 6/7頁
文件大小: 196K
代理商: 7MBR25UA120
IGBT Module
7MBR25UA120
[ Brake ]
[ Brake ]
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C / chip
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Dynamic Gate charge (typ.)
Vcc=600V, Ic=25A, Tj= 25°C
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
Tj=25°C / chip
[ Brake ]
[ Brake ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
0
10
20
30
40
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
8V
0
10
20
30
40
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
VGE=20V 15V
12V
10V
8V
0
10
20
30
40
0
1
2
3
4
5
C
Collector-Emitter voltage : VCE [V]
Tj=125°C
Tj=25°C
0
2
4
6
8
10
5
10
15
20
25
C
Gate - Emitter voltage : VGE [ V ]
Ic=30A
Ic=15A
Ic=7.5A
0.1
1.0
10.0
0
10
20
30
C
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
30
60
90
C
G
Gate charge : Qg [ nC ]
0
VGE
VCE
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