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參數(shù)資料
| 型號(hào)： | 7MBR15NE-120 |
| 英文描述： | MCU CMOS 20LD .5K 20MHz, 0C to +70C, 20-SSOP 208mil, TUBE |
| 中文描述： | IGBT的7個(gè)人信息管理 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 833K |
| 代理商： | 7MBR15NE-120 |
H04-004-03a
15
MS6M 0802
a
11
+VGE=15V,-VGE <= 15V, RG >= 33
,Tj <= 125°C
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 25°C
Vcc=300V, VGE=±15V, Rg=33
Switching loss vs. Gate resistance (typ.)
Vcc=300V, Ic=100A, VGE=±15V, Tj= 125°C
[ Inverter ]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Reverse bias safe operating area (max.)
[ Inverter ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33
, Tj= 25°C
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=33
, Tj=125°C
10
100
1000
10000
0
50
100
150
200
S
Collector current : Ic [ A ]
toff
tf
tr
ton
10
100
1000
10000
0
50
100
150
200
S
Collector current : Ic [ A ]
tf
tr
toff
ton
10
100
1000
10000
10
100
1000
S
Gate resistance : Rg [
]
tr
tf
toff
ton
0
2
4
6
8
10
0
50
100
150
200
S
Collector current : Ic [ A ]
Eon(125°C)
Eon(25°C)
Eoff(125°
Err(125°C)
Err(25°
Eoff(25°C)
0
5
10
15
10
100
1000
S
Gate resistance : Rg [
]
Eoff
Err
Eon
0
50
100
150
200
250
0
200
400
600
800
C
Collector - Emitter voltage : VCE [ V ]
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 7MBR15NF120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:1200V/15A/PIM |
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| 7MBR15PE120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module(Power Integrated Module) |
| 7MBR15SA060D-01 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT Module |
| 7MBR15SA120 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:IGBT(1200V/15A/PIM) |
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