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    參數(shù)資料
    型號: 7MBR100UB-120
    英文描述: MCU CMOS 14LD 1K EPRM, -40C to +125C, 14-SOIC 150mil, T/R
    中文描述: IGBT的
    文件頁數(shù): 13/15頁
    文件大小: 833K
    代理商: 7MBR100UB-120
    H04-004-03a
    15
    MS6M 0802
    a
    13
    Vcc=300V
    ,
    Ic=50A
    ,
    Tj= 25°C
    VGE=0V, f= 1MHz, Tj= 25°C
    Capacitance vs. Collector-Emitter voltage (typ.)
    Dynamic Gate charge (typ.)
    Collector current vs. Collector-Emitter voltage (typ.)
    Tj= 25°C / chip
    Collector current vs. Collector-Emitter voltage (typ.)
    VGE=15V / chip
    Tj=25°C / chip
    [ Brake ]
    [ Brake ]
    Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
    [ Brake ]
    [ Brake ]
    [ Brake ]
    [ Brake ]
    Collector current vs. Collector-Emitter voltage (typ.)
    Tj= 125°C / chip
    0
    20
    40
    60
    80
    100
    120
    0
    1
    2
    3
    4
    5
    C
    Collector-Emitter voltage : VCE [V]
    VGE=20V 15V 12V
    10V
    8V
    0
    20
    40
    60
    80
    100
    120
    0
    1
    2
    3
    4
    5
    C
    Collector-Emitter voltage : VCE [V]
    VGE=20V 15V
    12V
    10V
    8V
    0
    20
    40
    60
    80
    100
    120
    0
    1
    2
    3
    4
    C
    Collector-Emitter voltage : VCE [V]
    Tj=125°C
    Tj=25°C
    0
    2
    4
    6
    8
    10
    5
    10
    15
    20
    25
    C
    Gate - Emitter voltage : VGE [ V ]
    Ic=100A
    Ic= 50A
    Ic= 25A
    0.01
    0.10
    1.00
    10.00
    0
    10
    20
    30
    C
    Collector-Emitter voltage : VCE [V]
    Cies
    Coes
    Cres
    0
    100
    200
    300
    400
    500
    0
    50
    100
    150
    200
    250
    0
    5
    10
    15
    20
    25
    C
    Gate charge : Qg [ nC ]
    VGE
    VCE
    G
    相關(guān)PDF資料
    PDF描述
    7MBR10KA-060 MCU CMOS 14LD 1K 20MHz, 0C to +70C, 14-SOIC 150mil, T/R
    7MBR10NE-120 MCU CMOS 14LD 1K EPRM, 0C to +70C, 14-PDIP, TUBE
    7MBR10NF-120 MCU CMOS 14LD 1K EPRM, -40C to +85C, 14-SOIC 150mil, TUBE
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