參數(shù)資料
型號: 7C192-20
廠商: Cypress Semiconductor Corp.
英文描述: 64K x 4 Static RAM with Separate I/O
中文描述: 64K的× 4靜態(tài)存儲(chǔ)器具有獨(dú)立的I / O
文件頁數(shù): 3/10頁
文件大?。?/td> 172K
代理商: 7C192-20
CY7C192
Document #: 38-05047 Rev. **
Page 3 of 10
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
Description
Test Conditions
7C192-20
Min.
2.4
7C192-25
Min.
2.4
Max.
Max.
Unit
V
V
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
V
CC
= Min., I
OH
=
4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
CC
+0.3V
0.8
+5
+5
300
0.4
V
CC
+0.3V
0.8
+5
+5
300
2.2
2.2
V
V
IL
I
IX
I
OZ
I
OS
Input LOW Voltage
[1]
Input Load Current
Output Leakage Current
Output Short Circuit
Current
[3]
V
CC
Operating Supply
Current
Automatic CE Power-Down
Current
TTL Inputs
Automatic CE Power-Down
Current
CMOS Inputs
0.5
5
5
3.0
5
5
V
μ
A
μ
A
mA
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
V
CC
= Max., V
OUT
= GND
I
CC
V
CC
= Max.
,
I
OUT
= 0 mA,
f = f
MAX
= 1/t
RC
Max. V
CC
, CE > V
IH
, V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
CE > V
CC
0.3V,
V
IN
V
CC
0.3V or V
IN
< 0.3V, f = 0
135
115
mA
I
SB1
30
30
mA
I
SB2
15
15
mA
Capacitance
[4]
Parameter
Description
Test Conditions
T
A
= 25
°
C, f = 1 MHz,
V
CC
= 5.0V
Max.
8
10
Unit
pF
pF
C
IN
C
OUT
Input Capacitance
Output Capacitance
AC Test Loads and Waveforms
[5]
Notes:
4.
5.
Tested initially and after any design or process changes that may affect these parameters.
t
r
= < 3 ns for the -12 and -15 speeds. T.
r
= < 5 ns for the -20 and slower speeds.
3.0V
5V
OUTPUT
R1 481
R2
255
30 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
< t
r
< t
r
5V
OUTPUT
R1 481
R2
255
5 pF
INCLUDING
JIG AND
SCOPE
(a)
(b)
OUTPUT
1.73V
Equivalent to:
TH
é
VENIN EQUIVALENT
167
ALL INPUT PULSES
C191
4
C191
5
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