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  • 參數(shù)資料
    型號(hào): 75SLQ045
    英文描述: 75V 45A Hi-Rel Schottky Discrete Diode in a SMD-1 package
    中文描述: 75V的45A條高可靠性肖特基二極管的離散貼片- 1封裝
    文件頁(yè)數(shù): 2/4頁(yè)
    文件大?。?/td> 45K
    代理商: 75SLQ045
    75SLQ030
    2
    www.irf.com
    Part number
    Max. DC Reverse Voltage (V)
    V
    RWM
    Max. Working Peak Reverse Voltage (V)
    75SLQ030
    V
    R
    Voltage Ratings
    30
    Parameters
    Max. Average Forward Current
    See Fig. 5
    Max. Peak One Cycle Non - Repetitive
    Surge Current
    Limits Units
    75
    Conditions
    I
    F(AV)
    A
    50% duty cycle @ T
    C
    = 82
    °
    C, square waveform
    I
    FSM
    600
    A
    @ t
    p
    = 8.3 ms half-sine
    Absolute Maximum Ratings
    Parameters
    Max.Junction Temperature Range
    Max. Storage Temperature Range
    Max. Thermal Resistance, Junction
    to Case
    Weight (Typical)
    Die Size (Typical)
    Case Style
    Limits
    -55 to 150
    -55 to 150
    1.1
    Units
    °
    C
    °
    C
    °
    C/W
    Conditions
    T
    J
    T
    stg
    R
    thJC
    DC operation
    See Fig. 4
    wt
    2.6
    g
    200X200 mils
    SMD-1
    Thermal-Mechanical Specifications
    Pulse Width < 300μs, Duty Cycle < 2%
    Pins 2 and 3 externally tied together
    Parameters
    Max. Forward Voltage Drop
    See Fig. 1
    Limits
    0.65
    0.82
    0.59
    0.79
    0.51
    0.77
    1.0
    100
    300
    Units
    V
    V
    V
    V
    V
    V
    mA
    mA
    mA
    Conditions
    V
    FM
    @ 75A
    @ 150A
    @ 75A
    @ 150A
    @ 75A
    @ 150A
    T
    J
    = 25
    °
    C
    T
    J
    = 100
    °
    C
    T
    J
    = 125
    °
    C
    T
    J
    = -55
    °
    C
    T
    J
    = 25
    °
    C
    T
    J
    = 125
    °
    C
    I
    RM
    Max. Reverse Leakage Current
    See Fig. 2
    V
    R
    = rated V
    R
    C
    T
    L
    S
    anode pad
    Max. Junction Capacitance
    Typical Series Inductance
    3650
    5.9
    pF
    nH
    V
    R
    = 5V
    DC
    ( 1MHz, 25
    °
    C )
    Measured from center of cathode pad to center of
    Electrical Specifications
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