參數(shù)資料
型號(hào)： 74LVCU04ATTR
廠商： 意法半導(dǎo)體
英文描述： LOW VOLTAGE CMOS HEX INVERTER (SINGLE STAGE) HIGH PERFORMANCE
中文描述： 低電壓CMOS六角逆變器（單級(jí)）高性能
文件頁數(shù)： 4/10頁
文件大?。?/td> 98K
代理商： 74LVCU04ATTR
Philips Semiconductors
Product specification
74LVCU04A
Hex inverter
1998 Jul 29
4
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
I
IK
V
I
I
OK
DC supply voltage
–0.5 to +6.5
V
DC input diode current
V
I
Note 2
0
–50
mA
DC input voltage
–0.5 to +6.5
V
DC output diode current
DC output voltage; output HIGH or LOW
V
O
Note 2
V
CC
or V
O
0
50
mA
V
I/O
–0.5 to V
CC
+0.5
–0.5 to 6.5
V
DC input voltage; output 3-State
Note 2
I
O
DC output source or sink current
V
O
= 0 to V
CC
50
mA
I
GND
, I
CC
T
stg
DC V
CC
or GND current
Storage temperature range
100
mA
–65 to +150
°
C
Power dissipation per package
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
P
TOT
above +70
°
C derate linearly with 8 mW/K
above +60
°
C derate linearly with 5.5 mW/K
500
500
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°
C to +85
°
C
TYP
1
UNIT
MIN
MAX
V
CC
= 1.2 V;V
OL
(max) = 0.5 V; I
O
= -100 A
V
CC
= 2.0 V; V
OL
(max) = 0.5 V; I
O
= -100 A
V
CC
= 2.7 V; V
OL
(max) = 0.5 V; I
O
= -100 A
V
CC
= 3.0 V; V
OL
(max) = 0.5 V; I
O
= -100 A
V
CC
= 3.6 V; V
OL
(max) = 0.5 V; I
O
= -100 A
V
CC
= 1.2 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100 A
V
CC
= 2.0 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100 A
V
CC
= 2.7 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100 A
V
CC
= 3.0 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100 A
V
CC
= 3.6 V; V
OH
(min) = V
CC
– 0.5 V; I
O
= 100 A
V
CC
= 2.7 V; V
CC
or GND; I
O
= -12 mA
V
CC
= 3.0 V; V
CC
or GND; I
O
= -100 A
V
CC
= 3.0 V; V
CC
or GND; I
O
= -12 mA
V
CC
= 3.0 V; V
CC
or GND; I
O
= -24 mA
V
CC
= 2.7 V; V
CC
or GND; I
O
= 12 mA
V
CC
= 3.0 V; V
CC
or GND; 12mA; I
O
= 100
μ
A
V
CC
= 3.0 V; V
CC
or GND; I
O
= 24mA
V
CC
1.2
V
IH
HIGH level Input voltage
1.8
V
2.0
2.4
GND
0.6
V
IL
LOW level Input voltage
0.6
V
1.0
1.2
V
CC
V
CC
V
CC
V
CC
0.5
V
OH
HIGH level output voltage
0.2
V
CC
V
0.6
1.0
0.40
V
OL
LOW level output voltage
0.20
V
0.55
I
I
Input leakage current
CC
= 3 6 V; 5 5 V or GND; Not for I/O pins
V
= 3.6 V; 5.5 V or GND; Not for I/O pins
V
CC
= 3.6 V; V
CC
or GND; I
O
= 0
0 1
0.1
5
μ
A
I
CC
Quiescent supply current
0.1
10
μ
A
NOTE:
1. All typical values are at V
CC
= 3.3V and T
amb
= 25
°
C.
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