參數(shù)資料
型號(hào): 74LVC543ABQ,118
廠商: NXP Semiconductors
文件頁數(shù): 16/20頁
文件大?。?/td> 0K
描述: IC REGISTERED TXRX 8BIT 24QFN
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 3,000
系列: 74LVC
邏輯類型: 寄存收發(fā)器,非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 8
輸出電流高,低: 24mA,24mA
電源電壓: 1.2 V ~ 3.6 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 24-VFQFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 24-DHVQFN(5.5x3.5)
包裝: 帶卷 (TR)
其它名稱: 74LVC543ABQ-T
74LVC543ABQ-T-ND
935275378118
74LVC543A_8
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 8 — 18 December 2012
5 of 20
NXP Semiconductors
74LVC543A
Octal D-type registered transceiver; 3-state
6.
Functional description
[1]
H = HIGH voltage level
L = LOW voltage level
h = a HIGH must be present one set-up time before the LOW to HIGH transition of LEAB, LEBA, EAB and EBA
l = a LOW must be present one set-up time before the LOW to HIGH transition of LEAB, LEBA, EAB and EBA
X = don’t care
= LOW to HIGH level transition
NC = no change
Z = high-impedance OFF-state
7.
Limiting values
[1]
The minimum input voltage ratings may be exceeded if the input current ratings are observed.
[2]
The output voltage ratings may be exceeded if the output current ratings are observed.
[3]
For SO24 packages: above 70
C the value of P
tot derates linearly with 8 mW/K.
For (T)SSOP24 packages: above 60
C the value of P
tot derates linearly with 5.5 mW/K.
For DHVQFN24 packages: above 60
C the value of P
tot derates linearly with 4.5 mW/K.
Table 3.
Functional table[1]
Operating modes
Input
Output
OEAB, OEBA
EAB, EBA
LEAB, LEBA
An, Bn
Bn, An
Disabled
H
X
Z
X
H
XXZ
Disabled plus latch
L
LhZ
L
Ll
Z
Latch plus display
L
hH
LL
lL
Transparent
L
H
L
LLL
Hold (do nothing)
L
H
X
NC
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
0.5
+6.5
V
IIK
input clamping current
VI < 0 V
50
-
mA
VI
input voltage
0.5
+6.5
V
IOK
output clamping current
VO > VCC or VO < 0 V
-
50
mA
VO
output voltage
output HIGH or LOW
0.5
VCC + 0.5
V
output 3-state
0.5
+6.5
V
IO
output current
VO = 0 V to VCC
-
50
mA
ICC
supply current
-
100
mA
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
Ptot
total power dissipation
Tamb = 40 C to +125 C
[3] -500
mW
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