參數(shù)資料
型號: 74LVC1G00GW,125
廠商: NXP Semiconductors
文件頁數(shù): 16/19頁
文件大?。?/td> 0K
描述: IC SNGL 2-IN NAND GATE 5TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標準包裝: 1
系列: 74LVC
邏輯類型: 與非門
電路數(shù): 1
輸入數(shù): 2
電源電壓: 1.65 V ~ 5.5 V
電流 - 靜態(tài)(最大值): 200µA
輸出電流高,低: 32mA,32mA
邏輯電平 - 低: 0.7 V ~ 0.8 V
邏輯電平 - 高: 1.7 V ~ 2 V
額定電壓和最大 CL 時的最大傳播延遲: 1.8ns @ 5V,50pF
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
供應(yīng)商設(shè)備封裝: 5-TSSOP
封裝/外殼: 6-TSSOP(5 引線),SC-88A,SOT-353
包裝: 標準包裝
產(chǎn)品目錄頁面: 840 (CN2011-ZH PDF)
其它名稱: 568-4609-6
74LVC1G00
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 10 — 2 July 2012
6 of 19
NXP Semiconductors
74LVC1G00
Single 2-input NAND gate
[1]
All typical values are measured at VCC = 3.3 V and Tamb =25 C.
11. Dynamic characteristics
[1]
Typical values are measured at Tamb =25 C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD VCC2 fi N+ (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(C
L VCC
2
f
o) = sum of outputs.
IOFF
power-off
leakage
current
VCC = 0 V; VI or VO =5.5 V
-
0.1
10
-
200
A
ICC
supply current
VI = 5.5 V or GND; IO = 0 A;
VCC = 1.65 V to 5.5 V
-0.1
10
-
200
A
I
CC
additional
supply current
VCC = 2.3 V to 5.5 V;
VI =VCC 0.6 V; IO =0 A;
per pin
-
5
500
-
5000
A
CI
input
capacitance
VCC =3.3 V; VI = GND to VCC
-5
-
pF
Table 7.
Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C
Unit
Min
Typ[1]
Max
Min
Max
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for load circuit see Figure 9.
Symbol Parameter
Conditions
40 C to +85 C
40 C to +125 C Unit
Min
Typ[1]
Max
Min
Max
tpd
propagation delay
A, B to Y; see Figure 8
VCC = 1.65 V to 1.95 V
1.0
3.3
8.0
1.0
10.5
ns
VCC = 2.3 V to 2.7 V
0.5
2.2
5.5
0.5
7.0
ns
VCC = 2.7 V
0.5
2.6
5.8
0.5
7.5
ns
VCC = 3.0 V to 3.6 V
0.5
2.2
4.7
0.5
6.0
ns
VCC = 4.5 V to 5.5 V
0.5
1.8
4.0
0.5
5.5
ns
CPD
power dissipation
capacitance
VI = GND to VCC;
VCC = 3.3 V
-14-
-
pF
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