參數(shù)資料
型號： 74LVC16373
廠商： NXP Semiconductors N.V.
英文描述： 16-bit D-type transparent latch with 5 Volt tolerant inputs/outputs 3-State
中文描述： 16位D型透明鎖存器與5伏/輸出三態(tài)耐壓輸入
文件頁數(shù)： 5/10頁
文件大?。?/td> 83K
代理商： 74LVC16373
Philips Semiconductors
Product specification
74LVC16373A/
74LVCH16373A
16-bit D-type transparent latch with 5 Volt tolerant
inputs/outputs (3-State)
1998 Mar 17
5
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
I
IK
V
I
DC supply voltage
–0.5 to +6.5
V
DC input diode current
V
I
Note 2
0
–50
mA
DC input voltage
–0.5 to +6.5
V
I
OK
DC output diode current
V
O
V
CC
or V
O
0
50
mA
V
O
DC output voltage; output HIGH or LOW state
Note 2
–0.5 to V
CC
+0.5
–0.5 to 6.5
V
DC output voltage; output 3-State
Note 2
I
O
DC output source or sink current
V
O
= 0 to V
CC
50
mA
I
GND
, I
CC
DC V
CC
or GND current
100
mA
T
stg
Storage temperature range
–65 to +150
°
C
Power dissipation per package
P
TOT
– plastic mini-pack (SO)
above +70
°
C derate linearly with 8 mW/K
above +60
°
C derate linearly with 5.5 mW/K
500
mW
– plastic shrink mini-pack (SSOP and TSSOP)
500
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions voltages are referenced to GND (ground = 0V)
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°
C to +85
°
C
TYP
1
UNIT
MIN
MAX
V
IH
HIGH level Input voltage
HIGH level In ut voltage
V
CC
= 1.2V
V
CC
= 2.7 to 3.6V
V
CC
= 1.2V
V
CC
= 2.7 to 3.6V
V
CC
2.0
V
V
IL
LOW level Input voltage
LOW level In ut voltage
GND
V
0.8
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= –12mA
V
CC
0.5
V
V
CC
= 3 0V; V = V
I
= V
IH
or V ; I = 100
IL
; I
O
= –100
μ
A
V
CC
0 2
0.2
V
CC
V
O
HIGH level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= –18mA
V
CC
0.6
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= –24mA
V
CC
0.8
V
CC
= 2.7V; V
I
= V
IH
or V
IL
; I
O
= 12mA
0.40
V
OL
LOW level output voltage
V
CC
= 3.0V; V
I
= V
IH
or V
IL
; I
O
= 100
μ
A
0.20
V
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 24mA
V
CC
= 3.6V; V
I
= 5.5V or GND
6
0.55
I
I
Input leakage current
0.1
5
μ
A
I
OZ
3-State output OFF-state current
V
CC
= 3.6V; V
I
= V
IH
or V
IL
; V
O
= 5.5V or GND
0.1
5
μ
A
I
off
Power off leakage supply
V
CC
= 0.0V; V
I
or V
O
= 5.5V
10
μ
A
I
CC
Quiescent supply current
V
CC
= 3.6V; V
I
= V
CC
or GND; I
O
= 0
0.1
20
μ
A
I
CC
Additional quiescent supply
current per input pin
V
CC
= 2.7V to 3.6V; V
I
= V
CC
–0.6V; I
O
= 0
5
500
μ
A
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