參數(shù)資料
型號: 74HCT7597
廠商: NXP Semiconductors N.V.
英文描述: Dual 4-Input Positive-AND Gates 14-SOIC -40 to 85
中文描述: 雙4輸入正與門,14-SOIC封裝,工作溫度-40℃到85℃
文件頁數(shù): 2/12頁
文件大?。?/td> 90K
代理商: 74HCT7597
December 1990
2
Philips Semiconductors
Product specification
8-bit shift register with input latches
74HC/HCT7597
FEATURES
8-bit parallel input latches
Shift register has direct overriding load and clear
Output capability: standard
I
CC
category: MSI
GENERAL DESCRIPTION
The 74HC/HCT7597 are high-speed Si-gate CMOS
devices and are pin compatible with low power Schottky
TTL (LSTTL). They are specified in compliance with
JEDEC standard no. 7A.
The 74HC/HCT7597 both consist of an 8-bit storage latch
feeding a parallel-in, serial-out 8-bit shift register.
When LE is LOW, data at the D
n
inputs enter the latches.
In this condition the latches are transparent, i.e. a latch
output will change state each time its corresponding
D-input changes.
When LE is HIGH the latches store the information that
was present at the D-inputs, a set-up time preceding the
LOW-to-HIGH transition of LE.
The shift register has a positive edge-triggered clock,
direct load (from storage) and clear inputs.
QUICK REFERENCE DATA
GND = 0 V; T
amb
= 25
°
C; t
r
= t
f
= 6 ns
Notes
1.
C
PD
is used to determine the dynamic power dissipation (P
D
in
μ
W):
P
D
= C
PD
×
V
CC2
×
f
i
+ ∑
(C
L
×
V
CC2
×
f
o
) where:
f
i
= input frequency in MHz; f
o
= output frequency in MHz
(C
L
×
V
CC2
×
f
o
) = sum of outputs
C
L
= output load capacitance in pF; V
CC
= supply voltage in V
For HC the condition is V
I
= GND to V
CC
; for HCT the condition is V
I
= GND to V
CC
1.5 V
2.
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”
.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC
HCT
t
PHL
/ t
PLH
propagation delay
SH
CP
to Q
LE to Q
PL to Q
D
7
to Q
maximum clock frequency SH
CP
input capacitance
power dissipation capacitance per package
C
L
= 15 pF; V
CC
= 5 V
15
22
20
20
99
3.5
29
17
27
23
24
79
3.5
30
ns
ns
ns
ns
MHz
pF
pF
f
max
C
I
C
PD
notes 1, 2
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