參數(shù)資料
型號(hào): 74HCT273PW,118
廠商: NXP Semiconductors
文件頁(yè)數(shù): 20/21頁(yè)
文件大?。?/td> 0K
描述: IC FLIP FLOP D POS EDGE 20TSSOP
產(chǎn)品培訓(xùn)模塊: Logic Packages
標(biāo)準(zhǔn)包裝: 1
系列: 74HCT
功能: 主復(fù)位
類型: D 型總線
輸出類型: 非反相
元件數(shù): 1
每個(gè)元件的位元數(shù): 8
頻率 - 時(shí)鐘: 36MHz
延遲時(shí)間 - 傳輸: 15ns
觸發(fā)器類型: 正邊沿
輸出電流高,低: 4mA,4mA
電源電壓: 4.5 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 20-TSSOP(0.173",4.40mm 寬)
包裝: 標(biāo)準(zhǔn)包裝
其它名稱: 568-8911-6
74HC_HCT273
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 4 — 10 June 2013
8 of 21
NXP Semiconductors
74HC273; 74HCT273
Octal D-type flip-flop with reset; positive-edge trigger
tPHL
HIGH to LOW
propagation
delay
MR to Qn; see Figure 8
VCC = 2.0 V
-
44
150
-
185
-
225
ns
VCC = 4.5 V
-
16
30
-
37
-
45
ns
VCC = 5.0 V; CL =15pF
-
15
-
ns
VCC = 6.0 V
-
14
26
-
31
-
38
ns
tt
transition time
Qn output; see Figure 7
VCC = 2.0 V
-
19
75
-
95
-
110
ns
VCC = 4.5 V
-
7
15
-
19
-
22
ns
VCC = 6.0 V
-
6
13
-
15
-
19
ns
tW
pulse width
CP input HIGH or LOW;
VCC = 2.0 V
80
14
-
100
-
120
-
ns
VCC = 4.5 V
16
5
-
20
-
24
-
ns
VCC = 6.0 V
14
4
-
17
-
20
-
ns
MR input LOW;
VCC = 2.0 V
60
17
-
75
-
90
-
ns
VCC = 4.5 V
12
6
-
15
-
18
-
ns
VCC = 6.0 V
10
5
-
13
-
15
-
ns
trec
recovery time
MR to CP; see Figure 8
VCC = 2.0 V
50
6
-
65
-
75
-
ns
VCC = 4.5 V
10
2
-
13
-
15
-
ns
VCC = 6.0 V
9
2-
11
-
13
-
ns
tsu
set-up time
Dn to CP; see Figure 9
VCC = 2.0 V
60
11
-
75
-
90
-
ns
VCC = 4.5 V
12
4
-
15
-
18
-
ns
VCC = 6.0 V
10
3
-
13
-
15
-
ns
th
hold time
Dn to CP; see Figure 9
VCC = 2.0 V
3
6-
3
-
3
-
ns
VCC = 4.5 V
3
2-
3
-
3
-
ns
VCC = 6.0 V
3
2-
3
-
3
-
ns
fmax
maximum
frequency
CP input; see Figure 7
VCC = 2.0 V
6
20.6
-
4.8
-
4
-
MHz
VCC = 4.5 V
30
103
-
24
-
20
-
MHz
VCC = 5.0 V; CL =15pF
-
66
-
MHz
VCC = 6.0 V
35
122
-
28
-
24
-
MHz
CPD
power
dissipation
capacitance
per package;
VI =GND to VCC
-20-
-
pF
Table 7.
Dynamic characteristics …continued
GND (ground = 0 V); CL = 50 pF unless otherwise specified; for test circuit, see Figure 10
Symbol Parameter
Conditions
25
C
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
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