參數(shù)資料
型號: 74HCT00
廠商: NXP Semiconductors N.V.
英文描述: Quad 2-input NAND gate
中文描述: 四2輸入與非門
文件頁數(shù): 5/17頁
文件大?。?/td> 98K
代理商: 74HCT00
2003 Jun 30
5
Philips Semiconductors
Product specification
Quad 2-input NAND gate
74HC00; 74HCT00
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1.
For DIP14 packages: above 70
°
C derate linearly with 12 mW/K.
For SO14 packages: above 70
°
C derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
°
C derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°
C derate linearly with 4.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC00
74HCT00
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
V
CC
V
I
V
O
T
amb
supply voltage
input voltage
output voltage
operating ambient
temperature
2.0
0
0
40
5.0
+25
6.0
V
CC
V
CC
+125
4.5
0
0
40
5.0
+25
5.5
V
CC
V
CC
+125
V
V
V
°
C
see DC and AC
characteristics per
device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
t
r
, t
f
input rise and fall times
6.0
1000
500
400
6.0
500
ns
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
I
IK
I
OK
I
O
supply voltage
input diode current
output diode current
output source or sink
current
V
CC
or GND current
storage temperature
power dissipation
0.5
+7.0
±
20
±
20
±
25
V
mA
mA
mA
V
I
<
0.5 V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5 V or V
O
> V
CC
+ 0.5 V
0.5 V < V
O
< V
CC
+ 0.5 V
I
CC
, I
GND
T
stg
P
tot
65
±
50
+150
500
mA
°
C
mW
T
amb
=
40 to +125
°
C; note 1
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