參數(shù)資料
型號: 74FST3861DW
廠商: ON SEMICONDUCTOR
元件分類: 通用總線功能
英文描述: 10−Bit Bus Switch
中文描述: CBT/FST/QS/5C/B SERIES, 10-BIT DRIVER, TRUE OUTPUT, PDSO24
封裝: SOIC-24
文件頁數(shù): 2/6頁
文件大?。?/td> 201K
代理商: 74FST3861DW
74FST3861
http://onsemi.com
2
Figure 2. Logic Diagram
23
11
2
OE
A
10
A
1
22
13
B
10
B
1
ORDERING INFORMATION
Device Order Number
Package
SOIC
24
SOIC
24
TSSOP
24*
(Pb
Free)
Shipping
48 Units / Rail
2500 Units / Tape & Reel
96 Units / Rail
74FST3861DW
74FST3861DWR2
74FST3861DT
74FST3861DTR2
TSSOP
24*
(Pb
Free)
2500 Units / Tape & Reel
74FST3861QS
74FST3861QSR
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb
Free.
QSOP
24
QSOP
24
96 Units / Rail
2500 Units / Tape & Reel
MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
Parameter
Value
0.5 to
0.5 to
0.5 to
Unit
V
V
V
mA
mA
mA
mA
mA
°
C
°
C
°
C
°
C/W
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
7.0
7.0
7.0
V
I
V
O
GND
GND
50
50
128
100
100
65 to
150
260
150
125
170
200
JA
SOIC
TSSOP
QSOP
MSL
F
R
V
ESD
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Level 1
Oxygen Index: 28 to 34
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
UL 94 V
0 @ 0.125 in
2000
200
N/A
V
I
Latchup
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22
A114
A.
2. Tested to EIA/JESD22
A115
A.
3. Tested to JESD22
C101
A.
4. Tested to EIA/JESD78.
Latchup Performance
Above V
CC
and Below GND at 85
°
C (Note 4)
500
mA
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