參數(shù)資料
型號(hào): 74F413D-CQB
廠商: National Semiconductor Corporation
英文描述: Shielded Multiconductor Cable; Number of Conductors:7; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyolefin; Leaded Process Compatible:Yes; Temperature Max:80 C; Voltage Nom.:300V RoHS Compliant: Yes
中文描述: 64 × 4先入先出緩沖器存儲(chǔ)器與并行I / O
文件頁(yè)數(shù): 6/6頁(yè)
文件大?。?/td> 113K
代理商: 74F413D-CQB
5
Physical Dimensions
inches (millimeters) (Continued)
16-Lead (0.300
×
Wide) Molded Dual-In-Line Package (P)
NS Package Number N16E
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相關(guān)PDF資料
PDF描述
74F413D-MQB Shielded Multiconductor Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyolefin; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Shielding Coverage:100% RoHS Compliant: Yes
74F413P-MQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F413PC 64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F413P-CQB 64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F413 64 x 4 First-In First-Out Buffer Memory with Parallel I/O
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
74F413D-MQB 制造商:NSC 制造商全稱:National Semiconductor 功能描述:64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F413PC 功能描述:先進(jìn)先出 64x4 先進(jìn)先出 Buffer Mem RoHS:否 制造商:IDT 電路數(shù)量: 數(shù)據(jù)總線寬度:18 bit 總線定向:Unidirectional 存儲(chǔ)容量:4 Mbit 定時(shí)類型:Synchronous 組織:256 K x 18 最大時(shí)鐘頻率:100 MHz 訪問(wèn)時(shí)間:10 ns 電源電壓-最大:3.6 V 電源電壓-最小:6 V 最大工作電流:35 mA 最大工作溫度:+ 85 C 封裝 / 箱體:TQFP-80 封裝:
74F413P-CQB 制造商:NSC 制造商全稱:National Semiconductor 功能描述:64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F413P-MQB 制造商:NSC 制造商全稱:National Semiconductor 功能描述:64 x 4 First-In First-Out Buffer Memory with Parallel I/O
74F420 WAF 制造商:Fairchild Semiconductor Corporation 功能描述: