
CHRONTEL
CH7322B
209-0000-095
Rev. 1.2,
6/29/2009
5
2.0
Electrical Specifications
2.1
Absolute Maximum Ratings
Symbol
Description
Min
Typ
Max
Units
VDD power supply relative to GND
-0.5
5
V
Input voltage of all digital pins
GND – 0.5
VDD + 0.5
V
TSC
Analog output short circuit duration
Indefinite
Sec
TSTOR
Storage temperature
-65
150
°C
TJ
Junction temperature
150
°C
TVPS
Vapor phase soldering (1 minute)
TBD
°C
Note:
1) Stresses greater than those listed under absolute maximum ratings may cause permanent
damage to the device. These are stress ratings only. Functional operation of the device at these
or any other conditions above those indicated under the normal operating condition of this
specification is not guaranteed. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2) The device is fabricated using high-performance CMOS technology. It should be handled as an
ESD sensitive device. Voltage on any signal pin that exceeds the power supply voltages by
more than ± 0.5V can induce destructive latchup.
2.2
Recommended Operating Conditions
Symbol
Description
Min
Typ
Max
Units
VDD
Power supply voltage
3.0
3.3
3.6
V
TAMB
Ambient operating temperature
0
85
°C
Electrical Specifications
(Operating Conditions: TAMB = 0°C-85°C, VDD =3.3V+/- 0.3V, unless otherwise specified)
2.2.1
Supply
Symbol
Description
Min
Typ
Max
Units
IVDD
Total supply current
4
TBD
mA
IPD
Total Power Down Current
0.50
mA
2.2.2
DC Specifications
Symbol
Description
Test Condition
Min
Typ
Max
Unit
CEC
CCEC
CEC pin capacitance
30
pF
Ileak,CEC
CEC pin leakage when power
removed
1.8
uA
VOH,CEC
CEC output high voltage
Note 1,2,3
2.5
2.7
3.3
V
VOL,CEC
CEC output low voltage
Note 1,2,3
0.2
0.6
V
VIH,CEC
CEC input high voltage
threshold
1.5
2.0
V