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參數(shù)資料
| 型號： | 71124S12YI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 12 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 71124S12YI8 |
6.42
IDT71124 CMOS Static RAM
1 Meg (128K x 8-bit) Revolutionary Pinout Commercial and Industrial Temperature Ranges
Capacitance
(T
A
= +25°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
8
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
8
pF
3514 tbl 03
Recommended DC Operating
Conditions
NOTE:
1. This parameter is guaranteed by device characterization, but is not production tested.
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
V
CC
+0.5
V
V
IL
Input Low Voltage
-0.5
(1)
____
0.8
V
3514 tbl 05
Grade
Temperature
GND
V
CC
Commercial
0°C to +70°C
0V
5.0V ± 10%
Industrial
–40°C to +85°C
0V
5.0V ± 10%
3514 tbl 04
Recommended Operating
Temperature and Supply Voltage
Pin Configuration
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliabilty.
2. V
TERM
must not exceed Vcc + 0.5V.
Truth Table
(1,2)
SOJ
Top View
5
6
7
8
9
10
11
12
13
14
15
16
A
0
A
1
A
2
A
3
CS
I/O
0
1
2
3
4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
15
A
14
A
13
I/O
1
V
CC
GND
I/O
2
I/O
3
WE
A
4
A
5
A
6
OE
I/O
7
I/O
6
GND
V
CC
I/O
5
I/O
4
3514 drw 02
A
7
A
12
A
11
A
10
A
9
A
8
SO32-3
A
16
,
NOTES:
1. H = V
, L = V
, x = Don't care.
2. VLC = 0.2V, VHC = VCC -0.2V.
3. Other inputs
≥
VHC or
≤
VLC.
CS
OE
WE
I/O
Function
L
L
H
DATA
OUT
Read Data
L
X
L
DATA
IN
Write Data
L
H
H
High-Z
Output Disabled
H
X
X
High-Z
Deselected - Standby (I
SB
)
V
HC
(3)
X
X
High-Z
Deselected - Standby (I
SB1
)
3514 tbl 01
Absolute Maximum Ratings
(1)
Symbol
Rating
Value
Unit
V
TERM
(2)
Terminal Voltage with
Respect to GND
-0.5 to +7.0
(2)
V
T
A
Operating Temperature
0 to +70
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-55 to +125
o
C
P
T
Power Dissipation
1.25
W
I
OUT
DC Output Current
50
mA
3514 tbl 02
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 71124S15YG8 | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 71124S15Y | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 71221-002 | PCB ADAPTER |
| 71221-003 | PCB ADAPTER |
| 71221-004 | PCB ADAPTER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71124S15Y | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ Tube |
| 71124S15Y8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Single 5V 1M-Bit 128K x 8 15ns 32-Pin SOJ T/R |
| 71124S15YG | 功能描述:靜態(tài)隨機存取存儲器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71124S15YG8 | 功能描述:靜態(tài)隨機存取存儲器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71124S15YGI | 功能描述:靜態(tài)隨機存取存儲器 128Kx8 ASYNCHRONOUS 5.0V STATIC RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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