參數(shù)資料
型號： 70V658S10BC
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 64K X 36 DUAL-PORT SRAM, 10 ns, PBGA256
封裝： 17 X 17 MM, 1.40 MM HEIGHT, 1 MM PITCH, BGA-256
文件頁數(shù)： 24/24頁
文件大?。?/td> 316K
代理商： 70V658S10BC
9
IDT70V659/58/57S
High-Speed 3.3V 128/64/32K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 3.3V ± 150mV)
NOTE:
1. At VDD < - 2.0V input leakages are undefined.
2. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to p.6 for details.
Symbol
Parameter
Test Conditions
70V659/58/57S
Unit
Min.
Max.
|ILI|
Input Leakage Current(1)
VDDQ = Max., VIN = 0V to VDDQ
___
10
A
|ILO|
Output Leakage Current
CE0
= VIH or CE1 = VIL, VOUT = 0V to VDDQ
___
10
A
VOL (3.3V)
Output Low Voltage(2)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage(2)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage(2)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage(2)
IOH = -2mA, VDDQ = Min.
2.0
___
V
4869 tbl 09
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(3) (VDD = 3.3V ± 150mV)
NOTES:
1. At f = fMAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS" at input
levels of GND to 3V.
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, TA = 25°C for Typ, and are not production tested. IDD DC(f=0) = 120mA (Typ).
5. CEX = VIL means CE0X = VIL and CE1X = VIH
CEX
= VIH means CE0X = VIH or CE1X = VIL
CEX
< 0.2V means CE0X < 0.2V and CE1X > VCC - 0.2V
CEX
> VCC - 0.2V means CE0X > VCC - 0.2V or CE1X - 0.2V
"X" represents "L" for left port or "R" for right port.
70V659/58/57S10
Com'l Only
70V659/58/57S12
Com'l
& Ind
70V659/58/57S15
Com'l
& Ind
Symbol
Parameter
Test Condition
Version
Typ.(4)
Max.
Typ.(4)
Max.
Typ.(4)
Max.
Unit
IDD
Dynamic Operating
Current (Both
Ports Active)
CEL
and CER= VIL,
Outputs Disabled
f = fMAX(1)
COM'L
S
340
500
315
465
300
440
mA
IND
S
____
365
515
350
490
ISB1
Standby Current
(Both Ports - TTL
Level Inputs)
CEL
= CER = VIH
f = fMAX(1)
COM'L
S
115
165
90
125
75
100
mA
IND
S
____
115
150
100
125
ISB2
Standby Current
(One Port - TTL
Level Inputs)
CE"A"
= VIL and CE"B" = VIH(5)
Active Port Outputs Disabled,
f=fMAX(1)
COM'L
S
225
340
200
325
175
315
mA
IND
S
____
225
365
200
350
ISB3
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports CEL and
CER
> VDD - 0.2V, VIN > VDD - 0.2V
or VIN < 0.2V, f = 0(2)
COM'L
S
315
3
15
315
mA
IND
S
____
615
6
15
ISB4
Full Standby Current
(One Port - CMOS
Level Inputs)
CE"A"
< 0.2V and CE"B" > VDD - 0.2V(5)
VIN > VDD - 0.2V or VIN < 0.2V, Active
Port, Outputs Disabled, f = fMAX(1)
COM'L
S
220
335
195
320
170
310
mA
IND
S
____
220
360
195
345
4869 tbl 10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
70V658S10BC8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 2.25M-Bit 64K x 36 10ns 256-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 2.25MBIT 64KX36 10NS 256BGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:64Kx36 STD-PWR, 3.3V DUAL-PORT RAM
70V658S10BCG 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
70V658S10BF 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
70V658S10BF8 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Async Dual 3.3V 2.25M-Bit 64K x 36 10ns 208-Pin CABGA T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM ASYNC DUAL 3.3V 2.25MBIT 64KX36 10NS 208CABGA - Tape and Reel 制造商:Integrated Device Technology Inc 功能描述:64Kx36 STD-PWR, 3.3V DUAL-PORT RAM
70V658S10BFG 功能描述:靜態(tài)隨機存取存儲器 64Kx36 STD-PWR, 3.3V DUAL-PORT RAM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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