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參數(shù)資料
| 型號(hào)： | 6N80 |
| 廠商： | IXYS Corporation |
| 英文描述： | N-Channel Enhancement Mode |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 87K |
| 代理商： | 6N80 |
IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670
IXYS Semiconductor
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: +49-6206-5030 Fax: +49-6206-503629
I
XYS reserves the right to change limits, test conditions, and dimensions.
IXTH 6N80
IXTM 6N80
IXTH 6N80A
IXTM 6N80A
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
B
G
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
CES
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100
125
150
I
D
0
1
2
3
4
5
6
7
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
R
D
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
2
4
6
8
10
R
D
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
GS
- Volts
3.0 3.5 4.0 4.5
5.0 5.5 6.0 6.5 7.0 7.5
I
D
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
0
5
10
15
20
25
30
I
D
0
1
2
3
4
5
6
7
8
9
6V
V
GS
= 10V
6N80
7V
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
V
GS
= 15V
V
GS
= 10V
I
D
= 2.5A
6N80A
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Case Temperature
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
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| 6N80_11 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:6A, 800V N-CHANNEL POWER MOSFET |
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| 6N80G-TF1-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:6A, 800V N-CHANNEL POWER MOSFET |
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| 6N80L-TA3-T | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET |
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