參數(shù)資料
型號: 6N100F
廠商: IXYS Corporation
英文描述: Power MOSFETs
中文描述: 功率MOSFET
文件頁數(shù): 4/4頁
文件大?。?/td> 820K
代理商: 6N100F
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
IXFH 6N100F
IXFT 6N100F
Q
g
- nanocoulombs
0
10
20
30
40
50
V
G
0
2
4
6
8
10
I
D
= 3A
I
G
= 10mA
V
DS
= 500V
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
40
50
70
200
300
400
500
700
2000
100
1000
Crss
Coss
Ciss
f = 1MHz
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
t
0.001
0.01
0.1
1
D = Duty Cycle
D=0.2
D=0.1
D=0.5
D=0.05
D=0.02
D=0.01
Single pulse
T
J
= 125
O
C
T
J
= 25
O
C
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
0
2
4
6
8
10
12
14
16
18
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 7. Gate Charge Characteristic Curve
Fig. 8. Capacitance Curves
Fig. 9. Source Current vs. Source to Drain Voltage
Fig. 10. Thermal Impedance
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