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參數(shù)資料
| 型號： | 6MBI150U4B-120 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 200 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 479K |
| 代理商： | 6MBI150U4B-120 |
H04-004-03a
MS5F6013
13
4
Storage temperature
Isolation
voltage
Screw
Torque
(*1) All terminals should be connected together when isolation test will be done.
-
Mounting (*3)
Tj=125
o
C
VCE(sat)
(terminal)
VCE(sat)
(chip)
Cies
3. Absolute Maximum Ratings ( at Tc= 25
o
C unless otherwise specified )
Maximum
Ratings
1200
-40 to +125
VGES
Units
V
200
150
±20
VCES
Symbols
Conditions
400
300
150
Tc=80
o
C
Tc=25
o
C
Tc=80
o
C
Icp
1ms
Tstg
-Ic pulse
Pc
Tj
1ms
1 device
IGES
Collector Power Dissipation
Junction temperature
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : 2.5 to 3.5 Nm (M5)
Tj=125
o
C
Tj=25
o
C
Collector-Emitter voltage
Gate-Emitter voltage
mA
nA
Units
300
735
+150
4. Electrical characteristics ( at Tj= 25
o
C unless otherwise specified )
-Ic
V
-
-
-
2.45
2.65
1.90
2.10
17
0.32
0.10
2.60
-
2.05
-
-
1.20
0.60
-
1.00
0.30
2.35
-
-
-
-
W
Ic=150A
VGE=15V
Tj=25
o
C
V
Collector current
Ic
Continuous
Tc=25
o
C
A
N m
o
C
Viso
AC : 1min.
2500
VAC
Items
Conditions
Symbols
typ.
max.
Characteristics
min.
ICES
-
-
1.0
VGE=0V
VCE=0V
VGE=±20V
VCE=20V
VCE=1200V
-
-
200
V
Ic=150mA
VGE(th)
4.5
VCE=10V,VGE=0V,f=1MHz
Vcc=600V
Ic=150A
6.5
8.5
nF
ton
tr
us
tr(i)
toff
VGE=±15V
RG=2.2
Ω
-
-
0.03
0.41
0.07
2.20
tf
VF
(terminal)
VF
(chip)
trr
-
-
IF=150A
VGE=0V
Tj=25
o
C
Tj=125
o
C
Tj=25
o
C
V
-
-
-
2.30
1.65
1.75
-
-
1.80
-
0.35
IF=150A
-
Tj=125
o
C
3.40
-
m
Ω
-
Items
Resistance
5000
495
3375
between terminal and copper base (*1)
between thermistor and others (*2)
3.5
us
R lead
T=25/50
o
C
3305
-
Ω
T=100
o
C
465
520
3450
T=25
o
C
-
Input capacitance
Turn-on time
B value
(*4) Biggest internal terminal resistance among arm.
B
R
Zero gate voltage
collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
T
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance,
terminal-chip (*4)
K
I
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