參數(shù)資料
型號(hào): 6CUT10-E
廠商: VISHAY INTERTECHNOLOGY INC
元件分類(lèi): 整流器
英文描述: 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-251AA
封裝: ROHS COMPLIANT, IPAK-3
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 102K
代理商: 6CUT10-E
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94662
4
Revision: 04-Jun-09
6CUT10-E, 6CWT10FN-E
Vishay High Power Products High Performance Schottky
Generation 5.0, 2 x 3 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
012335
Allo
w
ab
le
Case
T
e
mperature
(°C)
IF(AV) - Average Forward Current (A)
145
160
155
150
165
170
175
180
DC
See note (1)
Square wave (D = 0.50)
80 % rated V
R applied
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Av
e
ra
g
e
P
o
wer
Loss
(W)
IF(AV) - Average Forward Current (A)
0
0.5
1.5
1
2
2.5
270°
180°
120°
90°
72°
RMS limit
DC
tp - Square Wave Pulse Duration (s)
I FSM
-
Non-Repetitive
Sur
g
e
Current
(A)
10
100
1000
10 000
10
100
1000
相關(guān)PDF資料
PDF描述
6CWT10FNTR-E 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA
6CWT10FNTRL-E 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA
6CWT10FN-E 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA
6DAF1 MAINS POWER CONNECTOR
6DAFP MAINS POWER CONNECTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
6CUT10-E_12 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:High Performance Schottky Generation 5.0, 2 x 3 A
6CV855-02(L) 制造商: 功能描述: 制造商:undefined 功能描述:
6CW5 制造商:GEC 制造商全稱(chēng):GEC 功能描述:POWER-AMPLIFIER PENTODE
6CWF10 制造商:NJSEMI 制造商全稱(chēng):New Jersey Semi-Conductor Products, Inc. 功能描述:Rectifiers Ultra-Fast Recovery
6CWF10F 制造商:NJSEMI 制造商全稱(chēng):New Jersey Semi-Conductor Products, Inc. 功能描述:Ultra-Fast Recovery