參數(shù)資料
型號(hào)： 6AM15
廠商： Hitachi,Ltd.
英文描述： Silicon N/P Channel MOS FET High Speed Power Switching
中文描述： 硅N / P系列溝道MOS FET高速電源開(kāi)關(guān)
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 236K
代理商： 6AM15
6AM15
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch Pch
Drain to source voltage
VDSS
60
–60
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID
10
–10
A
Drain peak current
ID(pulse)Note1
40
–40
A
Body-drain diode reverse drain current
IDR
10
–10
A
Avalanche current
IAP Note3
10
–10
A
Avalanche energy
EAR Note3
8.5
mJ
Channel dissipation
Pch (Tc = 25°C)
Note2
42
W
Channel dissipation
Pch Note2
4.8
W
Channel temperature
Tch
150
°C
Storage temperature
Note:
1. PW
≤
10
μ
s, duty cycle
≤
1%
2. 6 Devices operation
3. Value at Ta = 25°C, Rg
≥
50
Tstg
–55 to +150
°C
Electrical Characteristics
(N Channel)
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DS
S
60
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GS
S
±20
—
—
V
IG = ±100
μ
A, VDS = 0
Gate to source leak current
IGSS
—
—
±10
μ
A
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
μ
A
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
VGS(off) 1.5
—
2.5
V
VDS = 10 V, I D = 1 mA
Static drain to source on state
RDS(on) —
0.045
0.060
ID = 5 A, VGS = 10 V
Note5
resistance
RDS(on) —
0.070
0.115
ID = 5 A, VGS = 4 V
Note5
Forward transfer admittance
|yfs|
5.5
9
—
S
ID = 5 A, VDS = 10 V
Note5
Input capacitance
Ciss
—
500
—
pF
VDS = 10 V
Output capacitance
Coss
—
260
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
110
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
10
—
ns
VGS =10 V, ID = 5 A
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