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參數(shù)資料
| 型號(hào)： | 6AM14 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Power MOS FET Array |
| 中文描述： | 硅N-Channel/P-Channel功率MOS FET陣列 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 6AM14 |
6AM14
4
Electrical Characteristics P Channel
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DS
S
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GS
S
±20
—
—
V
IG = ±100 μA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
μA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
–250
μA
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off) –0.5
—
–1.5
V
VDS = –10 V, ID = –1 mA
Static drain to source on state
resistance
RDS(on) —
0.12
0.16
ID = –4 A
VGS = –4 V*1
—
0.16
0.3
ID = –2 A
VGS = –2.5 V*1
Forward transfer admittance
|yfs|
5.0
8.0
—
S
ID = –4 A
VDS = –10 V*1
Input capacitance
Ciss
—
1450
—
pF
VDS = –10 V
Output capacitance
Coss
—
590
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
120
—
pF
f = 1 MHz
Turn-on delay time
td(on)
—
15
—
ns
VGS = –10 V, ID = –4 A
RL = 7.5
Rise time
tr
—
75
—
ns
Turn-off delay time
td(off)
—
240
—
ns
Fall time
tf
—
180
—
ns
Body to drain diode forward
voltage
VDF
—
–1.0
—
V
IF = –7 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
210
—
ns
IF = –7 A, VGS = 0
diF/dt = 50 A/μs
Note:
1. Pulse Test
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