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參數(shù)資料
| 型號(hào)： | 6AM12 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel/P-Channel Complementary Power MOS FET Array(N溝道/P溝道功率MOSFET陣列) |
| 中文描述： | 硅N-Channel/P-Channel互補(bǔ)功率場(chǎng)效應(yīng)晶體管陣列（不適用溝道/頁(yè)溝道功率MOSFET的陣列） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 6AM12 |
6AM12
2
Outline
SP-12TA
1.
2, 8, 9
3, 7, 10.
4, 6, 11.
5, 12.
123456789
11
10
12
5
S
12
S
11
G
6
G
9
G
8
G
S
1
4 G
Pch
Nch
2 G
D 10
D 7
D 3
N-ch Source
N-ch Gate
N-ch Drain
P-ch Drain
P-ch Gate
P-ch Source
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Symbol
Nch
Pch
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch (Tc = 25°C)*
60
–60
V
Gate to source voltage
±20
±20
V
Drain current
7
–7
A
Drain peak current
1
28
–28
A
Body to drain diode reverse drain current
7
–7
A
Channel dissipation
2
42
W
Channel dissipation
Pch*
2
4.8
W
Channel temperature
Tch
150
°C
Storage temperature
Notes 1. PW
≤
10 μs, duty cycle
≤
1%
2. 6 devices operation
Tstg
–55 to +150
°C
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| 6AM13 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel/P-Channel Complementary Power MOS FET Array |
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