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參數(shù)資料
| 型號(hào)： | 60MT80KB |
| 元件分類(lèi)： | 橋式整流 |
| 英文描述： | 3 PHASE, 60 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 封裝： | INT-A-PAK-6 |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大小： | 95K |
| 代理商： | 60MT80KB |
60-70MT..KB Series
5
Bulletin I27500 rev. A 05/03
www.irf.com
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 6 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
140
150
0
2040
6080
100
Ma
x
imu
m
A
llo
w
a
b
le
C
as
e
T
e
m
p
e
ra
tu
re
(°
C)
Total Output Current (A)
120°
(Rect)
70MT..KB Series
1
10
100
1000
01
23
4
5
T= 25°C
J
In
s
tan
ta
n
e
ou
s
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
Instantaneous Forward Voltage (V)
70MT..KB Series
Per Junction
T = 150°C
J
Fig. 3 - Total Power Loss Characteristics
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
0
25
50
75
100
125
150
Maximum Allowable Ambient Temperature (°C)
R
=
0.0
5
K
/W
-
D
elt
a
R
th
S
A
0.1
2
K
/W
0.2
K
/W
0.3
K/W
0.5
K/W
0.7
K/W
1 K/W
1.5 K/W
0
25
50
75
100
125
150
175
200
225
250
0
1020
304050607080
Total Output Current (A)
Ma
xi
m
u
m
T
ota
lP
o
w
e
r
L
os
s
(W
)
120°
(Rect)
60MT..KB Series
T = 150°C
J
100
150
200
250
300
350
400
110
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Initial T = 150°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
Pe
a
k
H
a
lf
Si
n
e
W
a
v
e
F
o
rw
a
rd
C
u
rr
e
n
t
(A
)
60MT..KB Series
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
J
50
100
150
200
250
300
350
400
450
0.01
0.1
1
P
e
a
k
Ha
lf
S
ine
W
a
ve
F
o
rw
ar
d
C
u
rr
e
nt
(A
)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Initial T = 150°C
No Voltage Reapplied
Rated V
Reapplied
Versus Pulse Train Duration.
RRM
60MT..KB Series
J
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 60MT100KBPBF | 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 60MT80KBPBF | 3 PHASE, 60 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE |
| 60MT100KB | 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
| 60MT120KBPBF | 3 PHASE, 60 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE |
| 60MT100KBPBF | 3 PHASE, 60 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 60MT80KPBF | 制造商:Vishay Angstrohm 功能描述:Diode Rectifier Bridge Single 800V 75A 6-Pin INT-A-PAK 制造商:Vishay 功能描述:Diode Rectifier Bridge Single 800V 75A 6-Pin INT-A-PAK |
| 60N035 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:N-Channel Field Effect Transistor |
| 60N05 | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:60A, 50V N-CHANNEL POWER MOSFET |
| 60N05G-TA3-T | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:60A, 50V N-CHANNEL POWER MOSFET |
| 60N05L-TA3-T | 制造商:UTC-IC 制造商全稱(chēng):UTC-IC 功能描述:60A, 50V N-CHANNEL POWER MOSFET |
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