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參數(shù)資料
| 型號(hào)： | 60HQ060 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 60 A, 60 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 封裝： | HERMETIC SEALED, DO-5, 1 PIN |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | 60HQ060 |
60HQ... Series
2
Bulletin PD-2.055 rev. E 11/02
www.irf.com
I
F(AV)
Max. Average Forward Current
60
A
50% duty cycle @ T
C
= 118 °C, rectangular wave form
* See Fig. 5
I
FSM
Max. Peak One Cycle Non-Repetitive
8400
5s Sine or 3s Rect. pulse
Surge Current * See Fig. 7
1200
10ms Sine or 6ms Rect. pulse
E
AS
Non-RepetitiveAvalancheEnergy
15
mJ
T
J
= 25 °C, I
AS
= 1 Amps, L = 30 mH
I
AR
RepetitiveAvalancheCurrent
1
A
Current decaying linearly to zero in 1 sec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Parameters
60HQ
Units
Conditions
Absolute Maximum Ratings
V
FM
Max. Forward Voltage Drop
(1)
0.89
V
@ 60A
* See Fig. 1
1.09
V
@ 120A
0.70
V
@ 60A
0.84
V
@ 120A
I
RM
Max. Reverse Leakage Current (1)
1.5
mA
T
J
= 25 °C
* See Fig. 2
20
mA
T
J
= 125 °C
C
T
Max. Junction Capacitance
1400
pF
V
R
= 5V
DC
, (test signal range 100Khz to 1Mhz) 25 °C
L
S
Typical Series Inductance
7.5
nH
Measured from top of terminal to mounting plane
dv/dt Max. Voltage Rate of Change
10000
V/ s
(Rated V
R
)
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
Electrical Specifications
Parameters
60HQ
Units
Conditions
(1) Pulse Width < 300s, Duty Cycle < 2%
T
J
Max. Junction Temperature Range
-65 to 175
°C
T
stg
Max. Storage Temperature Range
-65 to 175
°C
R
thJC
Max. Thermal Resistance Junction
0.83
°C/W
DC operation
* See Fig. 4
to Case
R
thCS
Typical Thermal Resistance, Case to
0.25
°C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
15 (0.53) g (oz.)
T
Mounting Torque
Min.
23 (20)
Non-lubricatedthreads
Max.
46 (40)
CaseStyle
DO-203AB(DO-5) JEDEC
Kg-cm
(Ibf-in)
Thermal-Mechanical Specifications
Parameters
60HQ
Units
Conditions
A
Following any rated
load condition and
with rated V
RRM
applied
Part number
60HQ060
60HQ080
60HQ090
60HQ100
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
60
80
90
100
Voltage Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 60HQ080 | 60 A, 80 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 60HQ090 | 60 A, 90 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 60HQ100 | 60 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 60HQ060 | 60 A, 60 V, SILICON, RECTIFIER DIODE, DO-203AB |
| 60HQ080 | 60 A, 80 V, SILICON, RECTIFIER DIODE, DO-203AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 60HQ080 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 90V 60A 2PIN DO-203AB - Bulk 制造商:IR 功能描述:60HQ080 IR STUD RECTIFIER 1787 NOTES |
| 60HQ090 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:Schottky Rectifiers Single Chip Devices |
| 60HQ100 | 功能描述:DIODE SCHOTTKY 100V 60A DO-5 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 單二極管/整流器 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 二極管類型:標(biāo)準(zhǔn) 電壓 - (Vr)（最大）:50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時(shí)為正向 (Vf)（最大）:1.4V @ 6A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間(trr):300ns 電流 - 在 Vr 時(shí)反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座，接線柱安裝 封裝/外殼:DO-203AA，DO-4，接線柱 供應(yīng)商設(shè)備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879 |
| 60IB-1E | 制造商:Leviton Manufacturing Co 功能描述: |
| 60IF3100AA6AJ | 制造商:KEMET Corporation 功能描述: |
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