參數(shù)資料
型號(hào): 60EPU06PBF
元件分類: 整流器
英文描述: 60 A, SILICON, RECTIFIER DIODE
封裝: MODIFIED TO-247AC, 2 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 200K
代理商: 60EPU06PBF
5
60EPU06/ 60APU06
Bulletin PD-20771 Rev.B 01/04
Fig. 8 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70H
V
= 200V
R
0.01
G
D
S
dif/dt
ADJUST
ta
tb
trr
Q rr
IF
I RRM
0.5
di(rec)M/dt
0.75 IRRM
5
4
3
2
0
1
di /dt
f
Fig. 7 - Reverse Recovery Parameter Test Circuit
Reverse Recovery Circuit
di F /dt
di F /dt
4. Qrr - Area under curve defined by t rr
and IRRM
5. di (rec) M / dt - Peak rate of change of
current during t b portion of t rr
1. diF/dt - Rate of change of current through zero
crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured from zero
crossing point of negative going IF to point where
a line passing through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
Q rr =
t rr x I RRM
2
(3) Formula used: T
C = TJ - (Pd + PdREV) x R
thJC ;
Pd = Forward Power Loss = I
F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd
REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR
相關(guān)PDF資料
PDF描述
60APU06PBF 60 A, SILICON, RECTIFIER DIODE, TO-247AC
60HFU-100M 60 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AB
60HFU-200M 60 A, 200 V, SILICON, RECTIFIER DIODE, DO-203AB
60HFU-300M 60 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AB
60HFU-400M 60 A, 400 V, SILICON, RECTIFIER DIODE, DO-203AB
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