參數(shù)資料
型號(hào): 60EPS16PBF
元件分類: 整流器
英文描述: 60 A, 1600 V, SILICON, RECTIFIER DIODE, TO-247AC
封裝: LEAD FREE, MODIFIED TO-247AC, 2 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 146K
代理商: 60EPS16PBF
2
60EPS.. SAFE
IR Series
Bulletin I2122 rev. C 10/05
www.irf.com
T
J
Max. Junction Temperature Range
- 40 to 150
°C
T
stg
Max. Storage Temperature Range
- 40 to 150
°C
R
thJC Max. Thermal Resistance Junction
0.31
°C/W
DCoperation
to Case
R
thJA Max. Thermal Resistance Junction
40
°C/W
toAmbient
R
thCS Typical Thermal Resistance, Case to
0.2
°C/W
Mounting surface , smooth and greased
Heatsink
wt
Approximate Weight
6 (0.21)
g(oz.)
T
MountingTorque
Min.
6 (5)
Max.
12 (10)
CaseStyle
TO-247AC
JEDEC(Modified)
MarkingDevice
60EPS16
Thermal-Mechanical Specifications
Parameters
60EPS..
Units
Conditions
Kg-cm
(Ibf-in)
Voltage Ratings
Part Number
V
RRM , maximum
V
RSM , maximum non repetitive
I
RRM
peak reverse voltage
150°C
VV
mA
60EPS08
800
900
1
60EPS12
1200
1300
60EPS16
1600
1700
V
FM
Max. Forward Voltage Drop
1.1
V
@ 60A, T
J =
25°C
r
t
Forward slope resistance
3.99
m
VF(TO) Threshold voltage
0.77
V
I
RM
Max. Reverse Leakage Current
0.1
T
J =
25 °C
1.0
TJ = 150 °C
Electrical Specifications
Parameters
60EPS..
Units
Conditions
T
J =
150°C
V
R = rated VRRM
mA
I
F(AV) Max. Average Forward Current
60
A
@ T
C = 118° C, 180° conduction half sine wave
I
FSM
Max.PeakOneCycleNon-Repetitive
950
10ms Sine pulse, rated VRRMapplied
SurgeCurrent
1100
10msSine pulse,novoltagereapplied
I2t
Max. I2t for fusing
4512
10ms Sine pulse, rated V
RRMapplied
6300
10msSinepulse,novoltagereapplied
I2√t
Max. I2√t for fusing
63000
A2√s
t = 0.1 to 10ms, no voltage reapplied
Absolute Maximum Ratings
Parameters
60EPS..
Units
Conditions
A
A2s
相關(guān)PDF資料
PDF描述
60EPS16 60 A, 1600 V, SILICON, RECTIFIER DIODE, TO-247AC
60EPS08 60 A, 800 V, SILICON, RECTIFIER DIODE
60EPS12PBF 60 A, 1200 V, SILICON, RECTIFIER DIODE
60EPS12 60 A, 1200 V, SILICON, RECTIFIER DIODE
60EPS16 60 A, 1600 V, SILICON, RECTIFIER DIODE, TO-247AC
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