- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄91743 > 5SLY12M3300 (ABB SWITZERLAND LTD SEMICONDUCTORS) 125 A, 3300 V, SILICON, RECTIFIER DIODE PDF資料下載
參數(shù)資料
| 型號： | 5SLY12M3300 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 125 A, 3300 V, SILICON, RECTIFIER DIODE |
| 封裝： | 13.60 X 13.60 MM, DIE-1 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 5SLY12M3300 |
5SLY 12M3300
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1676-00 May 08
page 2 of 3
0
62.5
125
187.5
250
0
1
2
3
VF [V]
IF
[A
]
25 °C
125 °C
0
50
100
150
200
250
0
62.5
125
187.5
250
312.5
375
IF [A]
E
re
c
[m
J
],
Ir
r
[A
],
Q
rr
[
C
]
VCC = 1800 V
di/dt = 640 A/s
Tvj = 125 °C
Lσ = 1200 nH
Erec
Irr
Qrr
Fig. 1
Typical diode forward characteristics
Fig. 2
Typical reverse recovery characteristics
vs. forward current
-250
-187.5
-125
-62.5
0
62.5
125
187.5
250
0
1
2
3
4
5
6
time [s]
IR
[A
]
-2000
-1750
-1500
-1250
-1000
-750
-500
-250
0
V
R
[V
]
IR
VR
VCC = 1800 V
IF = 125 A
di/dt = 640 A/s
Tvj = 125 °C
Lσ = 1200 nH
0
50
100
150
200
250
300
200
400
600
800
1000
di/dt [A/s]
E
re
c
[m
J
],
Ir
r
[A
]
Q
rr
[
C
]
VCC = 1800 V
IF = 125 A
Tvj = 125 °C
Lσ = 1200 nH
Erec
Irr
Qrr
Fig. 3
Typical diode reverse recovery behaviour
Fig. 4
Typical reverse recovery vs. di/dt
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 5SLY12N4500 | 110 A, 4500 V, SILICON, RECTIFIER DIODE |
| 5THZ47 | 1500 V, SILICON, RECTIFIER DIODE |
| 5TUZ52 | 1500 V, SILICON, RECTIFIER DIODE |
| 5THZ52 | 5 A, 1500 V, SILICON, RECTIFIER DIODE |
| 5THZ52 | 5 A, 1500 V, SILICON, RECTIFIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 5SM1311-6 | 制造商:Siemens 功能描述: |
| 5SM13126 | 制造商:Siemens 功能描述:2 pole RCCB,0.8kA 25A 125-230Vac |
| 5SM1314-6 | 制造商:SIEMENS 功能描述:Circuit Breaker; 2 Pole; 40A; 125-230 VAC; Type A |
| 5SM1342-0 | 制造商:Siemens 功能描述: |
| 5SM13446 | 制造商:SIEMENS 功能描述:RCCIRCUITBREAKER 4 POLE 40A 230-400VAC |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。