
5SLD 0600J650100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1412-00 Aug. 10
page 2 of 5
Diode characteristic values 2)
Parameter
Symbol
Conditions
min
typ
max
Unit
Tvj = 25 °C
3.2
3.8
Forward voltage 3)
VF
IF = 600 A
Tvj = 125 °C
3.4
4.0
V
Tvj = 25 °C
6
Continuous reverse current
IR
VR = 6500 V
Tvj = 125 °C
35
75
mA
Tvj = 25 °C
790
Reverse recovery current
Irr
Tvj = 125 °C
990
A
Tvj = 25 °C
700
Recovered charge
Qrr
Tvj = 125 °C
1200
C
Tvj = 25 °C
1700
Reverse recovery time
trr
Tvj = 125 °C
2200
ns
Tvj = 25 °C
1100
Reverse recovery energy
Erec
VR = 3600 V,
IF = 600 A,
VGE =
±15 V,
di/dt = 2500 A/s
Lσ = 280 nH
inductive load,
switch:
Tvj = 125 °C
2200
mJ
Module stray inductance
Lσ AC
per diode
36
nH
TC = 25 °C
0.2
Resistance, terminal-chip
RAA’+CC’
per diode
TC = 125 °C
0.3
m
2) Characteristic values according to IEC 60747 – 2
3) Forward voltage is given at chip level
Thermal properties 4)
Parameter
Symbol
Conditions
min
typ
max
Unit
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.021 K/W
Diode thermal resistance 5)
case to heatsink
Rth(c-s)DIODE diode per switch,
λ grease = 1W/m x K
0.018
K/W
Mechanical properties 4)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dimensions
L x W x H Typical , see outline drawing
130 x 140 x 48
mm
Term. to base:
40
Clearance distance in air
da
according to IEC 60664-1
and EN 50124-1
Term. to term:
26
mm
Term. to base:
64
Surface creepage distance
ds
according to IEC 60664-1
and EN 50124-1
Term. to term:
56
mm
Comparative tracking index
CTI
≥ 600
Ms
Base-heatsink, M6 screws
4
6
Mounting torques 5)
Mt1
Main terminals, M8 screws
8
10
Nm
Mass
m
1150
g
4) Thermal and mechanical properties according to IEC 60747 – 15
5) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01