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參數(shù)資料
| 型號： | 5SDA10D1730 |
| 廠商： | ABB SWITZERLAND LTD SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1140 A, 1700 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 5SDA10D1730 |
ABB Semiconductors AG
5SDA 10D2303
Doc. No. 5SYA 1120 - 01 Apr-98
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
On-state
IFAVM
Max. average on-state current
1140 A
Half sine wave, TC = 85°C
IFRMS
Max. RMS on-state current
1790 A
IFSM
Max. peak non-repetitive
13.5 kA
tp
=
10 ms
Tj =
160°C
surge current
14.5 kA
tp
=
8.3 ms
After surge:
I
2t
Limiting load integral
910
103 A2s
tp
=
10 ms
VR
≈ 0V
875
103 A2s
tp
=
8.3 ms
VF0
Threshold voltage
0.83 V
IF
= 1000 - 3000 A
Tj =
160°C
rF
Slope resistance
0.30 m
VF min
On-state voltage
1.20 V
IF
=
1800 A
Tj =
25°C
VF max
On-state voltage
1.35 V
Thermal
Tj
Storage and operating
-40...160°C
junction temperature range
RthJC
Thermal resistance
80
K/kW
Anode side cooled
junction to case
80
K/kW
Cathode side cooled
40
K/kW
Double side cooled
RthCH
Thermal resistance case to
16
K/kW
Single side cooled
heat sink
8
K/kW
Double side cooled
For a given case temperature Tc at ambient temperature Ta the
maximum on-state current can be calculated as follows:
I
=
-V
+
(V )
4 * f * r * P
2 * f
r
FAVM
F0
2
f
2
f
2
+
*
where
P =
T
- T
R
J max
C
thjc
or
P =
T
- T
R
J max
A
Analytical function for transient thermal impedance:
Z
(t) =
R (1- e
)
thJC
i
-t /
i 1
4
i
τ
=
∑
i
1
2
3
4
R (K/kW)
20.95
10.57
7.15
1.33
τ
i (s)
0.396
0.072
0.009
0.0044
t [s]
10-3
10-2
10-1
100
101
2
3 4 5 6 7
2
3
4 5 6 7
2
3 4 5 5 6
2
3 4 5 6 7
0
5
10
15
20
25
30
35
40
45
F
m =10...12 kN
Double Side Cooling
Zth
[K/kW]
IFAVM (A)
P (W)
VF0 (V)
rF (
)
T max (°C)
Tc (°C)
Ta (°C)
Rthja (K/kW)
RthJC (K/kW)
f
2 =
1
for DC current
2.5
for half-sine wave
3.1
for 120°el., sine
6
for 60° el., sine
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