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參數(shù)資料
| 型號(hào)： | 5NB90 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 900V - 2.3 ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET |
| 中文描述： | ? -頻道900V - 2.3歐姆- 5A條- TO-220/TO-220FP PowerMESH MOSFET的 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 44K |
| 代理商： | 5NB90 |
STP5NB90
STP5NB90FP
N - CHANNEL 900V - 2.3
- 5A - TO-220/TO-220FP
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 2.3
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY(UPS)
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM,INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP5NB90
STP5NB90FP
900
900
±
30
5(*)
3.1(*)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
V
V
V
A
A
A
W
5
3.1
20
125
1.0
4.5
20
40
0.32
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
5
Α,
di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 2.5
< 2.5
I
D
STP5NB90
STP5NB90FP
900 V
900 V
5 A
5 A
1/6
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